for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - sm t 0 - 1 HMC995LP5GE v00.0611 gaas phemt mmic 3 watt power amplifier smt with power detector, 12 - 16 ghz general description features functional diagram the h m c995 lp 5g e is a 4 stage gaas ph em t mmi c 2 w att p ower amplifer with an integrated temperature compensated on-chip power detector which operates between 12 and 16 ghz. the h m c995 lp 5g e provides 27 db of gain, 35.5 dbm of saturated output power, and 24% p a e from a +7v supply. the h m c995 lp 5g e exhibits excellent linearity and is optimized for high capacity digital microwave radio. i t is also ideal for 13.75 to 14.5 ghz ku band v s at transmitters as well as s atc om applications. the h m c995 lp 5g e amplifer i / o s are internally matched to 50 o hms and is packaged in a leadless q fn 5x5 mm surface mount package and requires no external matching components. i ntergrated p ower detector s aturated o utput p ower: 35.5 dbm @ 24% p a e high o utput ip 3: 41 dbm high gain: 27 db dc s upply: +5v to +7v @ 1200 ma n o e xternal m atching r equired electrical specifcations t a = +25 c, vdd = vdd1 = vdd2 = vdd3 = vdd4 = vdd5 = +7v, idd = 1200 ma [1] typical applications the h m c995 lp 5g e is ideal for: ? point-to-point radios ? point-to-multi-point radios ? vsat & satcom ? military & space p arameter m in. typ. m ax. units f requency r ange 12 - 16 ghz gain [3] 24 27 db gain variation o ver temperature 0.03 db/ c i nput r eturn l oss 9 db o utput r eturn l oss 15 db o utput p ower for 1 db compression ( p 1db) 32 34.5 dbm s aturated o utput p ower ( p sat) 35.5 dbm o utput third o rder i ntercept ( ip 3) [2] 41 dbm total s upply current ( i dd) 1200 ma [1] adjust (vgg1=vgg2=vgg3) between -2 to 0v to achieve i dd = 1200ma typical. [2] m easurement taken at +7v @ 1200ma, p out / tone = +22 dbm [3] board loss subtracted out
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - sm t 0 - 2 HMC995LP5GE v00.0611 gaas phemt mmic 3 watt power amplifier smt with power detector, 12 - 16 ghz input return loss vs. temperature output return loss vs. temperature broadband gain & return loss vs. frequency gain vs. temperature [1] p1db vs. temperature p1db vs. supply voltage -25 -15 -5 5 15 25 35 10 11 12 13 14 15 16 17 18 s21 s11 s22 frequency (ghz) response (db) 18 22 26 30 34 38 12 13 14 15 16 +25c +85c -40c frequency (ghz) gain (db) -25 -20 -15 -10 -5 0 12 13 14 15 16 +25c +85c -40c frequency (ghz) return loss (db) -30 -25 -20 -15 -10 -5 0 12 13 14 15 16 +25c +85c -40c frequency (ghz) return loss (db) 28 30 32 34 36 38 40 12 13 14 15 16 +25c +85c -40c frequency (ghz) p1db (dbm) 28 30 32 34 36 38 40 12 13 14 15 16 5v 6v 7v frequency (ghz) p1db (dbm)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - sm t 0 - 3 HMC995LP5GE v00.0611 gaas phemt mmic 3 watt power amplifier smt with power detector, 12 - 16 ghz output ip3 vs. supply current, pout/tone = +22 dbm output ip3 vs. temperature, pout/tone = +22 dbm psat vs. supply current (idd) p1db vs. supply current (idd) psat vs. temperature psat vs. supply voltage 28 30 32 34 36 38 40 12 13 14 15 16 +25c +85c -40c frequency (ghz) psat (dbm) 28 30 32 34 36 38 40 12 13 14 15 16 5v 6v 7v frequency (ghz) psat (dbm) 28 30 32 34 36 38 40 12 13 14 15 16 1000 ma 1100 ma 1200 ma frequency (ghz) p1db (dbm) 30 32 34 36 38 40 42 44 46 48 12 13 14 15 16 +25c +85c -40c frequency (ghz) ip3 (dbm) 30 32 34 36 38 40 42 44 46 48 12 13 14 15 16 1000 ma 1100 ma 1200 ma frequency (ghz) ip3 (dbm) 28 30 32 34 36 38 40 12 13 14 15 16 1000 ma 1100 ma 1200 ma frequency (ghz) psat(dbm)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - sm t 0 - 4 HMC995LP5GE v00.0611 gaas phemt mmic 3 watt power amplifier smt with power detector, 12 - 16 ghz power compression @ 13 ghz output ip3 vs. supply voltage, pout/tone = +22 dbm output im3 @ vdd = +6v output im3 @ vdd = +5v output im3 @ vdd = +7v 30 32 34 36 38 40 42 44 46 48 12 13 14 15 16 5v 6v 7v frequency (ghz) ip3 (dbm) power compression @ 15 ghz 0 10 20 30 40 50 60 70 80 10 12 14 16 18 20 22 24 12 ghz 13 ghz 14 ghz 15 ghz 16 ghz pout/tone (dbm) im3 (dbc) 0 10 20 30 40 50 60 70 80 10 12 14 16 18 20 22 24 12 ghz 13 ghz 14 ghz 15 ghz 16 ghz pout/tone (dbm) im3 (dbc) 0 10 20 30 40 50 60 70 80 10 12 14 16 18 20 22 24 12 ghz 13 ghz 14 ghz 15 ghz 16 ghz pout/tone (dbm) im3 (dbc) 0 5 10 15 20 25 30 35 40 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 pout gain pae input power (dbm) pout (dbm), gain (db), pae (%) 0 5 10 15 20 25 30 35 40 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 pout gain pae input power (dbm) pout (dbm), gain (db), pae (%)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - sm t 0 - 5 HMC995LP5GE v00.0611 gaas phemt mmic 3 watt power amplifier smt with power detector, 12 - 16 ghz detector voltage vs. frequency & temperature 0.01 0.1 1 10 -5 3 11 19 27 35 12.5 ghz +25c 12.5 ghz +85c 12.5 ghz -40c 15.5 ghz +25c 15.5 ghz +85c 15.5 ghz -40c output power (dbm) vref-vdet (v) power dissipation gain & power vs. supply current @ 14 ghz gain & power vs. supply voltage @ 14 ghz reverse isolation vs. temperature -90 -80 -70 -60 -50 -40 -30 -20 -10 0 11 12 13 14 15 16 17 +25c +85c -40c frequency (ghz) isolation (db) 15 20 25 30 35 40 1000 1050 1100 1150 1200 gain p1db psat idd (ma) gain (db), p1db (dbm), psat (dbm) 20 25 30 35 40 45 50 5 5.5 6 6.5 7 gain p1db psat vdd (v) gain (db), p1db (dbm), psat (dbm) 0 2 4 6 8 10 12 -10 -8 -6 -4 -2 0 2 4 6 8 10 13 ghz 14 ghz 15 ghz power dissipation (w) input power (dbm)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - sm t 0 - 6 HMC995LP5GE v00.0611 gaas phemt mmic 3 watt power amplifier smt with power detector, 12 - 16 ghz absolute maximum ratings drain bias voltage (vdd1-5) +8v rf i nput p ower ( rfin ) +24 dbm channel temperature 150 c continuous p diss (t= 85 c) (derate 137 m w /c above 85 c) 8.9 w thermal r esistance (channel to gnd paddle) 7.3 c/ w s torage temperature -65 to +150 c o perating temperature -40 to +85 c es d s ensitivity (hb m ) class 1a vdd (v) idd (ma) 5 1200 6 1200 7 1200 note: amplifer will operate over full voltage ranges shown above vgg adjusted to achieve idd = 1200 ma typical supply current vs. vdd ele ct ros tat ic sensi t i v e de v ic e o b ser v e ha n d lin g pre caut ions
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - sm t 0 - 7 HMC995LP5GE v00.0611 gaas phemt mmic 3 watt power amplifier smt with power detector, 12 - 16 ghz outline drawing p art n umber p ackage body m aterial l ead f inish msl r ating p ackage m arking [1] h m c995 lp 5g e r oh s -compliant l ow s tress i njection m olded p lastic 100% matte s n msl 3 [2] h995 xxxx [1] 4-digit lot number xxxx [2] m ax peak refow temperature of 260 c package information no tes: 1. p ackag e b o dy m at eri a l : a lu min a 2. le ad a n d g ro u n d p add le pl at in g: 30-80 mi c roin ch es g ol d o v er 50 mi c roin ch es minim u m ni ck el . 3. d imensions a re in in ch es [ millime t ers ]. 4. le ad sp ac in g t oler a n c e is non -cu m u l at i v e 5. p ackag e w a rp s ha ll not e xc ee d 0.05mm datu m -c- 6. a ll g ro u n d le ad s a n d g ro u n d p add le m u s t b e sol d ere d to p cb rf g ro u n d.
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - sm t 0 - 8 HMC995LP5GE v00.0611 gaas phemt mmic 3 watt power amplifier smt with power detector, 12 - 16 ghz pin descriptions p in n umber f unction description i nterface s chematic 1-3, 9, 14 17-19, 23, 24 n /c these pins are not connected internally, however all data shown herein was measured with these pins connected to rf /dc ground externally. 4 rfin this pad is dc coupled and matched to 50 o hms. 5, 15 g n d these pins and package bottom must be connected to rf /dc ground. 6-8 vgg1, vgg2 vgg3 gate control for amplifer. e xternal bypass capacitors of 100p f , 10n f and 4.7u f are required. p lease follow mmi c amplifer biasing p roceedure app n ote. 10, 11 20-22 vdd1, vdd2, vdd3, vdd4, vdd5 drain bias voltage for the amplifer. e xternal bypass capacitors of 100p f , 10n f and 4.7 f capacitors are required. 12 vref dc voltage of diode biased through external resistor, used for temperature compensation of vdet. s ee application circuit. 13 vdet dc voltage representing rf output power rectifed by diode which is biased through an external resistor. s ee appilation circuit. 16 rfo ut this pin is dc coupled and matched to 50 o hms.
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - sm t 0 - 9 HMC995LP5GE v00.0611 gaas phemt mmic 3 watt power amplifier smt with power detector, 12 - 16 ghz application circuit
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - sm t 0 - 10 HMC995LP5GE v00.0611 gaas phemt mmic 3 watt power amplifier smt with power detector, 12 - 16 ghz evaluation pcb i tem description j1, j2, j5, j6 k connector sri j3, j4 dc p in c2, c3, c9, c12, c14, c16, c17, c19 100 p f capacitor, 0402 p kg. c1, c4, c10, c11, c13, c15, c18, c20 10 n f capacitor, 0402 p kg. c21, c22, c25 - c30 4.7u f capacitor, case a. u1 h m c995 lp 5g e p ower amplifer p cb 600-00163-00 e valuation p cb [1] r eference this number when ordering complete evaluation p cb [2] circuit board m aterial: r ogers 4350 or arlon fr 4 the circuit board used in the application should use rf circuit design techniques. s ignal lines should have 50 o hm impedance while the package ground leads and exposed paddle should be con - nected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appropriate heat sink. the evaluation circuit board shown is available from hittite upon request. list of materials for evaluation pcb eval01-HMC995LP5GE [1]
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